发明授权
US08945996B2 Methods of forming circuitry components and methods of forming an array of memory cells
有权
形成电路组件的方法和形成存储器单元阵列的方法
- 专利标题： Methods of forming circuitry components and methods of forming an array of memory cells
- 专利标题（中）： 形成电路组件的方法和形成存储器单元阵列的方法
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申请号： US13085083申请日： 2011-04-12
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公开(公告)号： US08945996B2公开(公告)日： 2015-02-03
- 发明人: Sanh D. Tang , Roger W. Lindsay , Krishna K. Parat
- 申请人： Sanh D. Tang , Roger W. Lindsay , Krishna K. Parat
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John, P.S.
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/82 ; H01L27/10
摘要：
A method of forming circuitry components includes forming a stack of horizontally extending and vertically overlapping features. The stack has a primary portion and an end portion. At least some of the features extend farther in the horizontal direction in the end portion moving deeper into the stack in the end portion. Operative structures are formed vertically through the features in the primary portion and dummy structures are formed vertically through the features in the end portion. Horizontally elongated openings are formed through the features to form horizontally elongated and vertically overlapping lines from material of the features. The lines individually extend from the primary portion into the end portion, and individually laterally about sides of vertically extending portions of both the operative structures and the dummy structures. Sacrificial material that is elevationally between the lines is at least partially removed in the primary and end portions laterally between the horizontally elongated openings. Other aspects and implementations are disclosed.
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