发明授权
US08946672B2 Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element
有权
能够在低电压下工作的电阻变化元件,半导体器件以及用于形成电阻变化元件的方法
- 专利标题: Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element
- 专利标题(中): 能够在低电压下工作的电阻变化元件,半导体器件以及用于形成电阻变化元件的方法
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申请号: US13508243申请日: 2010-11-08
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公开(公告)号: US08946672B2公开(公告)日: 2015-02-03
- 发明人: Munehiro Tada , Koichiro Okamoto , Toshitsugu Sakamoto , Hiromitsu Hada
- 申请人: Munehiro Tada , Koichiro Okamoto , Toshitsugu Sakamoto , Hiromitsu Hada
- 申请人地址: JP Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Foley & Lardner LLP
- 优先权: JP2009-258007 20091111
- 国际申请: PCT/JP2010/069836 WO 20101108
- 国际公布: WO2011/058947 WO 20110519
- 主分类号: H01L47/00
- IPC分类号: H01L47/00 ; H01L45/00
摘要:
A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.