发明授权
US08946851B1 Integrated MOS power transistor with thin gate oxide and low gate charge
有权
具有薄栅极氧化物和低栅极电荷的集成MOS功率晶体管
- 专利标题: Integrated MOS power transistor with thin gate oxide and low gate charge
- 专利标题(中): 具有薄栅极氧化物和低栅极电荷的集成MOS功率晶体管
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申请号: US13446987申请日: 2012-04-13
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公开(公告)号: US08946851B1公开(公告)日: 2015-02-03
- 发明人: Joel Montgomery McGregor , Vishnu Khemka
- 申请人: Joel Montgomery McGregor , Vishnu Khemka
- 申请人地址: US CA San Jose
- 专利权人: Maxim Integrated Products, Inc.
- 当前专利权人: Maxim Integrated Products, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Advent, LLP
- 主分类号: H01L23/58
- IPC分类号: H01L23/58
摘要:
A split gate power transistor includes a laterally configured power MOSFET including a doped silicon substrate having a first doped region and a second doped region of an opposite type as the first doped region, a gate oxide layer formed on a surface of the substrate, and a split polysilicon layer formed over the gate oxide layer. The polysilicon layer is cut into two electrically isolated portions, a first portion forming a polysilicon gate positioned over a channel region and a transition region of the substrate, and a second portion forming a polysilicon field plate formed entirely over a field oxide filled trench formed in the second doped region. The two polysilicon portions are separated by a gap. A lightly doped region is implanted in the substrate below the gap and adjacent to the trench, thereby forming a fill region having the same doping type as the first doped region.