发明授权
US08947642B2 Method and apparatus for estimating model parameters of and controlling a lithographic apparatus by measuring a substrate property and using a polynomial model
有权
通过测量基板特性和使用多项式模型来估计光刻设备的模型参数和控制光刻设备的方法和装置
- 专利标题： Method and apparatus for estimating model parameters of and controlling a lithographic apparatus by measuring a substrate property and using a polynomial model
- 专利标题（中）： 通过测量基板特性和使用多项式模型来估计光刻设备的模型参数和控制光刻设备的方法和装置
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申请号： US13010402申请日： 2011-01-20
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公开(公告)号： US08947642B2公开(公告)日： 2015-02-03
- 发明人: Scott Anderson Middlebrooks
- 申请人： Scott Anderson Middlebrooks
- 申请人地址： NL Veldhoven
- 专利权人： ASML Netherlands B.V.
- 当前专利权人： ASML Netherlands B.V.
- 当前专利权人地址： NL Veldhoven
- 代理机构： Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号： G03B27/32
- IPC分类号： G03B27/32 ; G03F7/20
摘要：
System and methods estimate model parameters of a lithographic apparatus and control lithographic processing by a lithographic apparatus. An exposure is performed using a lithographic apparatus across a wafer. A set of predetermined wafer measurement locations is obtained. Discrete orthonormal polynomials are generated using the predetermined substrate measurement locations. The overlay errors arising from the exposure are measured at the predetermined locations to obtain overlay measurements. The estimated model parameters of the lithographic apparatus are calculated from the overlay measurements by using the discrete orthogonal polynomials as a basis function to model the overlay across the wafer. Finally, the estimated model parameters are used to control the lithographic apparatus in order to provide corrected overlay across the wafer.
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