Invention Grant
- Patent Title: Cross-point resistive-based memory architecture
- Patent Title (中): 交叉点电阻式存储架构
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Application No.: US13777137Application Date: 2013-02-26
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Publication No.: US08949567B2Publication Date: 2015-02-03
- Inventor: Antoine Khoueir , Jon D. Trantham , Kevin Gomez , Ara Patapoutian
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hollingsworth Davis, LLC
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F12/00

Abstract:
A plurality of addressable memory tiles each comprise one or more cross-point arrays. Each array comprises a plurality of non-volatile resistance-change memory cells. A controller is configured to couple to the array and to a host system. The controller is configured to perform receiving, from the host system, one or more data objects each having a size equal to a predetermined logical block size, and storing the one or more data objects in a corresponding integer number of one or more of the memory tiles.
Public/Granted literature
- US20140244946A1 CROSS-POINT RESISTIVE-BASED MEMORY ARCHITECTURE Public/Granted day:2014-08-28
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