Invention Grant
US08949567B2 Cross-point resistive-based memory architecture 有权
交叉点电阻式存储架构

Cross-point resistive-based memory architecture
Abstract:
A plurality of addressable memory tiles each comprise one or more cross-point arrays. Each array comprises a plurality of non-volatile resistance-change memory cells. A controller is configured to couple to the array and to a host system. The controller is configured to perform receiving, from the host system, one or more data objects each having a size equal to a predetermined logical block size, and storing the one or more data objects in a corresponding integer number of one or more of the memory tiles.
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