Invention Grant
US08951384B2 Electron beam plasma source with segmented beam dump for uniform plasma generation
有权
电子束等离子体源，具有分段光束堆，用于均匀等离子体产生
- Patent Title: Electron beam plasma source with segmented beam dump for uniform plasma generation
- Patent Title (中): 电子束等离子体源，具有分段光束堆，用于均匀等离子体产生
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Application No.: US13595292Application Date: 2012-08-27
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Publication No.: US08951384B2Publication Date: 2015-02-10
- Inventor: Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
- Applicant: Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: H05H1/46
- IPC: H05H1/46 ; G21K5/00 ; H01J37/32 ; H05H7/00
Abstract:
A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.
Public/Granted literature
- US20130098882A1 ELECTRON BEAM PLASMA SOURCE WITH SEGMENTED BEAM DUMP FOR UNIFORM PLASMA GENERATION Public/Granted day:2013-04-25
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