Invention Grant
- Patent Title: FinFET formed over dielectric
- Patent Title (中): FinFET在电介质上形成
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Application No.: US13972032Application Date: 2013-08-21
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Publication No.: US08951850B1Publication Date: 2015-02-10
- Inventor: Hong He , Chiahsun Tseng , Chun-Chen Yeh , Yunpeng Yin
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/22 ; H01L29/66 ; H01L29/78
Abstract:
A method for semiconductor fabrication includes patterning one or more mandrels over a semiconductor substrate, the one or more mandrels having dielectric material formed therebetween. A semiconductor layer is formed over exposed portions of the one or more mandrels. A thermal oxidation is performed to diffuse elements from the semiconductor layer into an upper portion of the one or more mandrels and concurrently oxidize a lower portion of the one or more mandrels to form the one or more mandrels on the dielectric material.
Public/Granted literature
- US20150054077A1 FINFET FORMED OVER DIELECTRIC Public/Granted day:2015-02-26
Information query
IPC分类:
