Invention Grant
US08951865B2 Memory arrays where a distance between adjacent memory cells at one end of a substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion and formation thereof
有权
存储器阵列，其中在基本垂直部分的一端处的相邻存储器单元之间的距离大于在基本垂直部分的相对端处的相邻存储器单元之间的距离及其形成
- Patent Title: Memory arrays where a distance between adjacent memory cells at one end of a substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion and formation thereof
- Patent Title (中): 存储器阵列，其中在基本垂直部分的一端处的相邻存储器单元之间的距离大于在基本垂直部分的相对端处的相邻存储器单元之间的距离及其形成
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Application No.: US13746578Application Date: 2013-01-22
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Publication No.: US08951865B2Publication Date: 2015-02-10
- Inventor: Akira Goda
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L27/115 ; H01L29/788 ; H01L29/792
Abstract:
Memory arrays and their formation are disclosed. One such memory array has a string of series-coupled memory cells with a substantially vertical portion. A distance between adjacent memory cells at one end of the substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion. For other embodiments, thicknesses of respective control gates of the memory cells and/or thicknesses of the dielectrics between successively adjacent control gates may increase as the distances of the respective control gates/dielectrics from the opposing end of the substantially vertical portion increase.
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