Invention Grant
- Patent Title: Semiconductor devices having encapsulated stressor regions and related fabrication methods
- Patent Title (中): 具有封装应力区域和相关制造方法的半导体器件
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Application No.: US13785480Application Date: 2013-03-05
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Publication No.: US08951873B2Publication Date: 2015-02-10
- Inventor: Stefan Flachowsky , Jan Hoentschel
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78 ; H01L29/165 ; H01L29/66
Abstract:
Apparatus and related fabrication methods are provided for semiconductor device structures having silicon-encapsulated stressor regions. One semiconductor device includes a semiconductor substrate, a gate structure overlying the semiconductor substrate, stressor regions formed in the semiconductor substrate proximate the gate structure, and a silicon material overlying the stressor regions, the silicon material encapsulating the stressor regions.
Public/Granted literature
- US20130187209A1 SEMICONDUCTOR DEVICES HAVING ENCAPSULATED STRESSOR REGIONS AND RELATED FABRICATION METHODS Public/Granted day:2013-07-25
Information query
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