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US08952243B2 Stacked structure including vertically grown semiconductor, p-n junction device including the stacked structure, and method of manufacturing thereof 有权
堆叠结构包括垂直生长的半导体，包括堆叠结构的p-n结器件及其制造方法

Stacked structure including vertically grown semiconductor, p-n junction device including the stacked structure, and method of manufacturing thereof
摘要：
A stacked structure may include semiconductors or semiconductor layers grown on an amorphous substrate. A light-emitting device and a solar cell may include the stacked structure including the semiconductors grown on the amorphous substrate. A method of manufacturing the stacked structure, and the light-emitting device and the solar cell including the stacked structure may involve growing a crystalline semiconductor layer on an amorphous substrate.
摘要（中）：

堆叠结构可以包括在非晶衬底上生长的半导体或半导体层。 发光器件和太阳能电池可以包括包括在非晶衬底上生长的半导体的堆叠结构。 制造层叠结构的方法以及包括该堆叠结构的发光器件和太阳能电池可以包括在非晶衬底上生长晶体半导体层。

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