Invention Grant
- Patent Title: Light emitting device
-
Application No.: US14322990Application Date: 2014-07-03
-
Publication No.: US08952385B1Publication Date: 2015-02-10
- Inventor: Shunpei Yamazaki , Jun Koyama , Tatsuya Arao , Munehiro Azami
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2001-008379 20010117
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L27/32 ; H01L27/12

Abstract:
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
Public/Granted literature
- US20150035033A1 LIGHT EMITTING DEVICE Public/Granted day:2015-02-05
Information query
IPC分类: