Invention Grant
- Patent Title: Method to induce strain in 3-D microfabricated structures
- Patent Title (中): 在三维微结构中诱导应变的方法
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Application No.: US13953551Application Date: 2013-07-29
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Publication No.: US08952420B1Publication Date: 2015-02-10
- Inventor: Nicolas Loubet , Pierre Morin
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: US TX Coppell
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Main IPC: H01L31/0328
- IPC: H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109 ; H01L29/78 ; H01L29/66

Abstract:
Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.
Public/Granted literature
- US20150028349A1 METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES Public/Granted day:2015-01-29
Information query
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