Invention Grant
- Patent Title: Graphene field effect transistor
- Patent Title (中): 石墨烯场效应晶体管
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Application No.: US14076714Application Date: 2013-11-11
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Publication No.: US08957405B2Publication Date: 2015-02-17
- Inventor: James W. Adkisson , Thomas J. Dunbar , Jeffrey P. Gambino , Molly J. Leitch
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Michael LeStrange
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/16 ; H01L29/78 ; H01L29/66 ; H01L29/778 ; H01L29/417 ; H01L29/786 ; H01L27/12
Abstract:
Manufacturing a semiconductor structure including: forming a seed material on a sidewall of a mandrel; forming a graphene field effect transistor (FET) on the seed material; and removing the seed material.
Public/Granted literature
- US20140131661A1 GRAPHENE FIELD EFFECT TRANSISTOR Public/Granted day:2014-05-15
Information query
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