发明授权
- 专利标题: Electrical fuse and related applications
- 专利标题(中): 电熔丝及相关应用
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申请号: US12731325申请日: 2010-03-25
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公开(公告)号: US08957482B2公开(公告)日: 2015-02-17
- 发明人: Fu-Lung Hsueh , Tao Wen Chung , Po-Yao Ke , Shine Chung
- 申请人: Fu-Lung Hsueh , Tao Wen Chung , Po-Yao Ke , Shine Chung
- 申请人地址: TW
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW
- 代理机构: Lowe Hauptman & Ham, LLP
- 主分类号: H01L23/62
- IPC分类号: H01L23/62 ; H01L27/06 ; H01L23/525 ; H01L27/112 ; H01L27/10 ; H01L29/78
摘要:
In various embodiments, the fuse is formed from silicide and on top of a fin of a fin structure. Because the fuse is formed on top of a fin, its width takes the width of the fin, which is very thin. Depending on implementations, the fuse is also formed using planar technology and includes a thin width. Because the width of the fuse is relatively thin, a predetermined current can reliably cause the fuse to be opened. Further, the fuse can be used with a transistor to form a memory cell used in memory arrays, and the transistor utilizes FinFET technology.
公开/授权文献
- US20100244144A1 ELECTRICAL FUSE AND RELATED APPLICATIONS 公开/授权日:2010-09-30