Invention Grant
- Patent Title: Power voltage supply apparatus for three dimensional semiconductor
- Patent Title (中): 三维半导体电源供电装置
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Application No.: US13961011Application Date: 2013-08-07
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Publication No.: US08957529B2Publication Date: 2015-02-17
- Inventor: Chang Kun Park , Ho Yong Hwang
- Applicant: Soongsil University Research Consortium Techno-Park
- Applicant Address: KR Seoul
- Assignee: Soongsil University Research Consortium Techno-Park
- Current Assignee: Soongsil University Research Consortium Techno-Park
- Current Assignee Address: KR Seoul
- Agency: Sherr & Jiang, PLLC
- Priority: KR10-2012-0131050 20121119
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/538 ; H01L25/065

Abstract:
Provided is a power voltage supply apparatus of a 3-dimensional (3D) semiconductor. The power voltage supply apparatus includes a plurality of integrated circuits (ICs) which each include a first through silicon via (TSV) and a second TSV, are stacked such that the first TSVs are connected and second TSVs are connected, and are mounted on a printed circuit board (PCB), wherein a first PCB line formed on the PCB and supplying a first voltage is connected to a bottom of a first TSV of a bottom IC from among the plurality of ICs, and a second PCB line formed on the PCB and supplying a second voltage is connected to a top of a second TSV of a top IC.
Public/Granted literature
- US20140138798A1 POWER VOLTAGE SUPPLY APPARATUS FOR THREE DIMENSIONAL SEMICONDUCTOR Public/Granted day:2014-05-22
Information query
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