Invention Grant
- Patent Title: Multi-step deposition of ferroelectric dielectric material
- Patent Title (中): 铁电介质材料的多步沉积
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Application No.: US14169120Application Date: 2014-01-30
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Publication No.: US08962350B2Publication Date: 2015-02-24
- Inventor: Bhaskar Srinivasan , Brian E. Goodlin , Haowen Bu , Mark Visokay
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Frederick J. Telecky, Jr.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; C23C18/12 ; H01L49/02
Abstract:
Multi-step deposition of lead-zirconium-titanate (PZT) ferroelectric material. An initial portion of the PZT material is deposited by metalorganic chemical vapor deposition (MOCVD) at a low deposition rate, for example at a temperature below about 640 deg C. from vaporized liquid precursors of lead, zirconium, and titanium, and a solvent at a collective flow rate below about 1.1 ml/min, in combination with an oxidizing gas. Following deposition of the PZT material at the low flow rate, the remainder of the PZT film is deposited at a high deposition rate, attained by changing one or more of precursor and solvent flow rate, oxygen concentration in the oxidizing gas, A/B ratio of the precursors, temperature, and the like.
Public/Granted literature
- US20140225226A1 Multi-Step Deposition of Ferroelectric Dielectric Material Public/Granted day:2014-08-14
Information query
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