Invention Grant
- Patent Title: Nitride-based heterostructure field effect transistor having high efficiency
- Patent Title (中): 氮化物基异质结场效应晶体管效率高
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Application No.: US13226108Application Date: 2011-09-06
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Publication No.: US08963151B2Publication Date: 2015-02-24
- Inventor: Jae Hoon Lee , Ki Se Kim
- Applicant: Jae Hoon Lee , Ki Se Kim
- Applicant Address: KR Suwon-Si, Seoul
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Seoul
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2011-0041763 20110503
- Main IPC: H01L29/165
- IPC: H01L29/165 ; H01L29/778 ; H01L29/872 ; H01L29/16 ; H01L29/20
Abstract:
A high efficiency HFET may include a substrate, a semi-insulating gallium nitride (GaN) layer formed on the substrate, an aluminum gallium nitride (AlGaN) layer formed on the GaN layer, and a silicon carbide (SixC1-x) functional layer formed on the AlGaN layer.
Public/Granted literature
- US20120280233A1 NITRIDE-BASED HETEROSTRUCTURE FIELD EFFECT TRANSISTOR HAVING HIGH EFFICIENCY Public/Granted day:2012-11-08
Information query
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