发明授权
- 专利标题： Compound semiconductor device and method of manufacturing the same
- 专利标题（中）： 化合物半导体器件及其制造方法
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申请号： US13301331申请日： 2011-11-21
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公开(公告)号： US08963164B2公开(公告)日： 2015-02-24
- 发明人: Sanae Shimizu , Kenji Imanishi , Atsushi Yamada , Toyoo Miyajima
- 申请人： Sanae Shimizu , Kenji Imanishi , Atsushi Yamada , Toyoo Miyajima
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Fujitsu Patent Center
- 优先权： JP2010-269714 20101202
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L29/778 ; H01L21/02 ; H01L29/66 ; H01L29/20
摘要：
A compound semiconductor device includes: a substrate; an electron transit layer formed over the substrate; an electron supply layer formed over the electron transit layer; and a buffer layer formed between the substrate and the electron transit layer and including AlxGa1-xN(0≦x≦1), wherein the x value represents a plurality of maximums and a plurality of minimums in the direction of the thickness of the buffer layer, and the variation of x in any area having a 1 nm thickness in the buffer layer is 0.5 or less.