Invention Grant
- Patent Title: Light emitting diode having distributed Bragg reflector
- Patent Title (中): 具有分布式布拉格反射器的发光二极管
-
Application No.: US13760637Application Date: 2013-02-06
-
Publication No.: US08963183B2Publication Date: 2015-02-24
- Inventor: Duk Il Suh , Jae Moo Kim , Kyoung Wan Kim , Yeo Jin Yoon , Ye Seul Kim , Sang-Hyun Oh , Jin Woong Lee
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2010-0072822 20100728; KR10-2010-0076914 20100810
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/46

Abstract:
A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to blue, green, and red light.
Public/Granted literature
- US20130146925A1 LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR Public/Granted day:2013-06-13
Information query
IPC分类: