Invention Grant
US08963183B2 Light emitting diode having distributed Bragg reflector 有权
具有分布式布拉格反射器的发光二极管

Light emitting diode having distributed Bragg reflector
Abstract:
A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to blue, green, and red light.
Public/Granted literature
Information query
Patent Agency Ranking
0/0