发明授权
- 专利标题: Semiconductor light emitting device and method for manufacturing the same
- 专利标题(中): 半导体发光器件及其制造方法
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申请号: US13052250申请日: 2011-03-21
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公开(公告)号: US08963189B2公开(公告)日: 2015-02-24
- 发明人: Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki
- 申请人: Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: White & Case LLP
- 优先权: JP2010-130481 20100607
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/62 ; H01L27/15 ; H01L33/48
摘要:
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.