Invention Grant
US08969166B2 Method and apparatus for selectively improving integrated device performance
有权
用于选择性地提高集成器件性能的方法和装置
- Patent Title: Method and apparatus for selectively improving integrated device performance
- Patent Title (中): 用于选择性地提高集成器件性能的方法和装置
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Application No.: US14156785Application Date: 2014-01-16
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Publication No.: US08969166B2Publication Date: 2015-03-03
- Inventor: Zhongze Wang , Choh fei Yeap , Ping Liu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Peter Michael Kamarchik; Nicholas J. Pauley; Joseph Agusta
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/088

Abstract:
An apparatus for selectively improving integrated circuit performance is provided. In an example, an integrated circuit is fabricated according to an integrated circuit layout. A critical portion of the integrated circuit layout determines a speed of the integrated circuit, where at least a part of the critical portion includes at least one of a halo implant region, lightly doped drain (LDD) implant region, and source drain extension (SDE) implant region. A marker layer comprises the part of the critical portion that includes the at least one of the halo implant region, the lightly doped drain (LDD) implant region, and the source drain extension (SDE) implant region, and includes at least one transistor formed therefrom.
Public/Granted literature
- US20140131799A1 METHOD AND APPARATUS FOR SELECTIVELY IMPROVING INTEGRATED DEVICE PERFORMANCE Public/Granted day:2014-05-15
Information query
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