发明授权
- 专利标题： DRAM MIM capacitor using non-noble electrodes
- 专利标题（中）： DRAM MIM电容器采用非贵金属电极
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申请号： US14033326申请日： 2013-09-20
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公开(公告)号： US08969169B1公开(公告)日： 2015-03-03
- 发明人: Hanhong Chen , David Chi , Imran Hashim , Mitsuhiro Horikawa , Sandra G. Malhotra
- 申请人： Intermolecular, Inc. , Elpida Memory, Inc
- 申请人地址： US CA San Jose
- 专利权人： Intermolecular, Inc.
- 当前专利权人： Intermolecular, Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L49/02
摘要：
A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the conductive metal oxide material promotes a desired high-k crystal phase of a subsequently deposited dielectric layer. A dielectric layer is formed above the second bottom electrode layer. Optionally, an oxygen-rich metal oxide layer is formed above the dielectric layer. Optionally, a third top electrode layer is formed above the oxygen-rich metal oxide layer. The third top electrode layer includes a conductive metal oxide material. A fourth top electrode layer is formed above the third top electrode layer. The fourth top electrode layer includes a conductive metal nitride material.
公开/授权文献
- US20150087130A1 DRAM MIM Capacitor Using Non-Noble Electrodes 公开/授权日：2015-03-26
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