发明授权
US08975141B2 Dual work function FinFET structures and methods for fabricating the same
有权
双功能功能FinFET结构及其制造方法
- 专利标题： Dual work function FinFET structures and methods for fabricating the same
- 专利标题（中）： 双功能功能FinFET结构及其制造方法
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申请号： US13563202申请日： 2012-07-31
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公开(公告)号： US08975141B2公开(公告)日： 2015-03-10
- 发明人: Andy C. Wei , Bin Yang , Francis M. Tambwe
- 申请人： Andy C. Wei , Bin Yang , Francis M. Tambwe
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES, Inc.
- 当前专利权人： GLOBALFOUNDRIES, Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Ingrassia Fisher & Lorenz, P.C.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method for fabricating a dual-workfunction FinFET structure includes depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure, depositing a low-resistance material layer over the first workfunction material layer, and etching the low-resistance material layer and the first workfunction material layer from a portion of the FinFET structure. The method further includes depositing a second workfunction material in a layer in a plurality of trenches of the portion and depositing a stress material layer over the second workfunction material layer.
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