Invention Grant
US08975142B2 FinFET channel stress using tungsten contacts in raised epitaxial source and drain
有权
FinFET沟道应力使用钨触点在凸起的外延源和漏极中
- Patent Title: FinFET channel stress using tungsten contacts in raised epitaxial source and drain
- Patent Title (中): FinFET沟道应力使用钨触点在凸起的外延源和漏极中
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Application No.: US13870854Application Date: 2013-04-25
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Publication No.: US08975142B2Publication Date: 2015-03-10
- Inventor: Abhijeet Paul , Abner Bello , Vimal K. Kamineni , Derya Deniz
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Wayne F. Reinke, Esq.
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/78 ; H01L21/336 ; H01L29/66 ; H01L21/8234 ; H01L21/8238

Abstract:
Performance of a FinFET is enhanced through a structure that exerts physical stress on the channel. The stress is achieved by a combination of tungsten contacts for the source and drain, epitaxially grown raised source and raised drain, and manipulation of aspects of the tungsten contact deposition resulting in enhancement of the inherent stress of tungsten. The stress can further be enhanced by epitaxially re-growing the portion of the raised source and drain removed by etching trenches for the contacts and/or etching deeper trenches (and corresponding longer contacts) below a surface of the fin.
Public/Granted literature
- US20140319614A1 FINFET CHANNEL STRESS USING TUNGSTEN CONTACTS IN RAISED EPITAXIAL SOURCE AND DRAIN Public/Granted day:2014-10-30
Information query
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