发明授权
- 专利标题: Solderable contact regions
- 专利标题(中): 可焊接触点区域
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申请号: US13930668申请日: 2013-06-28
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公开(公告)号: US08975175B1公开(公告)日: 2015-03-10
- 发明人: Thomas Pass
- 申请人: SunPower Corporation
- 申请人地址: US CA San Jose
- 专利权人: SunPower Corporation
- 当前专利权人: SunPower Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Okamoto & Benedicto LLP
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L21/322 ; H01L21/265 ; H01L21/8238 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00
摘要:
A contact region for a semiconductor substrate is disclosed. Embodiments can include forming a seed metal layer having an exposed solder pad region on the semiconductor substrate and forming a first metal layer on the seed metal layer. In an embodiment, a solderable material, such as silver, can be formed on the exposed solder pad region prior to forming the first metal layer. Embodiments can include forming a solderable material on the exposed solder pad region after forming the first metal layer. Embodiments can also include forming a plating contact region on the seed metal layer, where the plating contact region allows for electrical conduction during a plating process.
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