Invention Grant
- Patent Title: Ion trap
- Patent Title (中): 离子阱
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Application No.: US14346007Application Date: 2012-09-20
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Publication No.: US08975581B2Publication Date: 2015-03-10
- Inventor: Jose Luis Verdu Galiana
- Applicant: The University of Sussex
- Applicant Address: GB East Sussex
- Assignee: The University of Sussex
- Current Assignee: The University of Sussex
- Current Assignee Address: GB East Sussex
- Agency: Sheridan Ross P.C.
- International Application: PCT/EP2012/068530 WO 20120920
- International Announcement: WO2013/041615 WO 20130328
- Main IPC: H01J49/20
- IPC: H01J49/20 ; H01J49/00

Abstract:
An ion trap comprising: a first array of magnetic elements arranged to generate a first magnetic field with a degree of homogeneity; and an array of electrodes arranged to generate an electrostatic field including a turning point in electrical potential at a location where the magnetic field has a substantially maximum degree of homogeneity; wherein the array of electrodes is planar and parallel to the direction of the magnetic field at the location; and wherein a primary first magnetic element is arranged to generate a first component of the first magnetic field and other first magnetic elements are arranged to generate compensating components of the first magnetic field that reduce the gradient, the curvature and higher order derivatives of the first component of the first magnetic field at the location where the first magnetic field has the substantially maximum degree of homogeneity.
Public/Granted literature
- US20140332680A1 ION TRAP Public/Granted day:2014-11-13
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