Invention Grant
- Patent Title: Ion detector
- Patent Title (中): 离子检测器
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Application No.: US13744863Application Date: 2013-01-18
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Publication No.: US08975592B2Publication Date: 2015-03-10
- Inventor: Hiroshi Kobayashi , Motohiro Suyama , Masahiro Kotani , Takayuki Ohmura
- Applicant: Hamamatsu Photonics K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2012-013067 20120125; JP2012-013068 20120125; JP2012-282857 20121226
- Main IPC: G01T1/20
- IPC: G01T1/20 ; G01T1/28

Abstract:
An ion detector 1A for detecting positive ions is provided with a chamber 2 having an ion entrance 3 which allows positive ions to enter, a conversion dynode 9 which is disposed in the chamber 2 and to which a negative potential is applied, and an avalanche photodiode 30 that is disposed in the chamber 2 and has an electron incident surface 30a which is opposed to the conversion dynode 9 and also into which secondary electrons emitted from the conversion dynode 9 are made incident. The electron incident surface 30a is located closer to the conversion dynode 9 than a positioning part 14 which supports the avalanche photodiode 30 in the grounded chamber 2.
Public/Granted literature
- US20130187057A1 ION DETECTOR Public/Granted day:2013-07-25
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