发明授权
- 专利标题： Transistor device and fabrication method
- 专利标题（中）： 晶体管器件及其制造方法
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申请号： US13686163申请日： 2012-11-27
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公开(公告)号： US08975642B2公开(公告)日： 2015-03-10
- 发明人: Neil Zhao , Mieno Fumitake
- 申请人： Neil Zhao , Mieno Fumitake
- 申请人地址： CN Shanghai
- 专利权人： Semiconductor Manufacturing International Corp
- 当前专利权人： Semiconductor Manufacturing International Corp
- 当前专利权人地址： CN Shanghai
- 代理机构： Anova Law Group, PLLC
- 优先权： CN201210241515 20120712
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L29/78 ; H01L29/66 ; H01L29/16 ; H01L29/267 ; H01L29/10 ; H01L29/161 ; H01L29/165 ; H01L21/265
摘要：
Various embodiments provide transistor devices and fabrication methods. An exemplary transistor device with improved carrier mobility can be formed by first forming a confining layer on a semiconductor substrate to confine impurity ions diffused from the semiconductor substrate to the confining layer. An epitaxial silicon layer can be formed on the confining layer, followed by forming a gate structure on the epitaxial silicon layer. A portion of the epitaxial silicon layer can be used as an intrinsic channel region. A source region and a drain region can be formed in portions of each of the epitaxial silicon layer, the confining layer, and the semiconductor substrate.
公开/授权文献
- US20140014968A1 TRANSISTOR DEVICE AND FABRICATION METHOD 公开/授权日：2014-01-16
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