发明授权
- 专利标题： Crucible and method for pulling a single crystal
- 专利标题（中）： 拉晶单晶的坩埚和方法
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申请号： US12692456申请日： 2010-01-22
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公开(公告)号： US08980004B2公开(公告)日： 2015-03-17
- 发明人: Masaru Sato , Masaki Morikawa
- 申请人： Masaru Sato , Masaki Morikawa
- 申请人地址： JP Akita-shi
- 专利权人： Japan Super Quartz Corporation
- 当前专利权人： Japan Super Quartz Corporation
- 当前专利权人地址： JP Akita-shi
- 代理机构： Christensen O'Connor Johnson Kindness PLLC
- 优先权： JP2009-012129 20090122
- 主分类号： C30B35/00
- IPC分类号： C30B35/00 ; C30B15/00 ; C30B15/10
摘要：
A crucible for pulling a silicon single crystal has a double structure comprising a silica crucible and a graphite crucible covering an outside of the silica crucible, wherein the silica crucible is provided at its opening end portion with an inward falling prevention means for imparting a radially outward force to a body portion of the silica crucible.
公开/授权文献
- US20100180815A1 CRUCIBLE AND METHOD FOR PULLING A SINGLE CRYSTAL 公开/授权日：2010-07-22
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