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发明授权
US08980679B2 Apparatus and methods for forming phase change layer and method of manufacturing phase change memory device 有权
用于形成相变层的装置和方法以及制造相变存储器件的方法

Apparatus and methods for forming phase change layer and method of manufacturing phase change memory device
摘要：
Provided are apparatus and methods for forming phase change layers, and methods of manufacturing a phase change memory device. A source material is supplied to a reaction chamber, and purges from the chamber. A pressure of the chamber is varied according to the supply of the source material and the purge of the source material.
摘要（中）：

提供了用于形成相变层的装置和方法，以及制造相变存储器件的方法。 将源材料供应到反应室，并从室中吹扫。 室的压力根据源材料的供应和源材料的吹扫而变化。

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