Invention Grant
- Patent Title: Methods for fabricating ZnOSe alloys
- Patent Title (中): 制备ZnOSe合金的方法
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Application No.: US14133203Application Date: 2013-12-18
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Publication No.: US08980682B2Publication Date: 2015-03-17
- Inventor: Haifan Liang , Jeroen Van Duren
- Applicant: Intermolecular Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/0224 ; H01L31/18
Abstract:
Methods of forming absorber layers in a TFPV device are provided. Methods are described to provide the formation of metal oxide films and heating the metal oxide films in the presence of a chalcogen to form a metal-oxygen-chalcogen alloy. Methods are described to provide the formation of metal oxide films, forming a layer of elemental chalcogen on the metal oxide film, and heating the stack to form a metal-oxygen-chalcogen alloy. In some embodiments, the metal oxide film includes zinc oxide and the chalcogen includes selenium.
Public/Granted literature
- US20140273333A1 Methods for fabricating ZnOSe alloys Public/Granted day:2014-09-18
Information query
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