Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on multilayer dielectric stacks. The control element can include a titanium oxide-carbon-doped silicon-titanium oxide multilayer stack. Electrode materials may include one of ruthenium, titanium nitride, or carbon. The titanium oxide layers may be replaced by one of zirconium oxide, hafnium oxide, aluminum oxide, magnesium oxide, or a lanthanide oxide.