Invention Grant
US08981454B2 Non-volatile memory device using finfet and method for manufacturing the same
有权
使用finfet的非易失性存储器件及其制造方法
- Patent Title: Non-volatile memory device using finfet and method for manufacturing the same
- Patent Title (中): 使用finfet的非易失性存储器件及其制造方法
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Application No.: US13061461Application Date: 2010-09-25
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Publication No.: US08981454B2Publication Date: 2015-03-17
- Inventor: Huilong Zhu , Haizhou Yin , Zhijiong Luo
- Applicant: Huilong Zhu , Haizhou Yin , Zhijiong Luo
- Applicant Address: CN
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: CN201010227256 20100707
- International Application: PCT/CN2010/001481 WO 20100925
- International Announcement: WO2012/003612 WO 20120112
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/66 ; H01L29/78
Abstract:
The present application discloses a non-volatile memory device, comprising a semiconductor fin on an insulating layer; a channel region at a central portion of the semiconductor fin; source/drain regions on both sides of the semiconductor fin; a floating gate arranged at a first side of the semiconductor fin and extending in a direction further away from the semiconductor fin; and a first control gate arranged on top of the floating gate or covering top and sidewall portions of the floating gate. The non-volatile memory device reduces a short channel effect, has an increased memory density, and is cost effective.
Public/Granted literature
- US20120007166A1 NON-VOLATILE MEMORY DEVICE USING FINFET AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-01-12
Information query
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