发明授权
- 专利标题： Recessed source and drain regions for FinFETs
- 专利标题（中）： 嵌入式FinFET的源极和漏极区域
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申请号： US13611335申请日： 2012-09-12
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公开(公告)号： US08981478B2公开(公告)日： 2015-03-17
- 发明人: Josephine B. Chang , Paul Chang , Michael A. Guillorn , Chung-Hsun Lin , Jeffrey W. Sleight
- 申请人： Josephine B. Chang , Paul Chang , Michael A. Guillorn , Chung-Hsun Lin , Jeffrey W. Sleight
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
Semiconductor devices and methods that include forming a fin field effect transistor by defining a fin hardmask on a semiconductor layer, forming a dummy structure over the fin hardmask to establish a planar area on the semiconductor layer, removing a portion of the fin hardmask that extends beyond the dummy structure, etching a semiconductor layer adjacent to the dummy structure to produce recessed source and drain regions, removing the dummy structure, etching the semiconductor layer in the planar area to produce fins, and forming a gate stack over the fins.
公开/授权文献
- US20130175624A1 RECESSED SOURCE AND DRAIN REGIONS FOR FINFETS 公开/授权日：2013-07-11
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