Invention Grant
- Patent Title: Explosion-protected semiconductor module
- Patent Title (中): 防爆半导体模块
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Application No.: US13932531Application Date: 2013-07-01
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Publication No.: US08981545B2Publication Date: 2015-03-17
- Inventor: Olaf Hohlfeld , Guido Boenig , Uwe Jansen
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102012211446 20120702
- Main IPC: H01L23/16
- IPC: H01L23/16 ; H01L23/24 ; H01L23/00 ; H01L25/18 ; H01L23/29

Abstract:
A semiconductor module includes an electrically conductive lower contact piece and an electrically conductive upper contact piece spaced apart from one another in a vertical direction. The module further includes a semiconductor chip having a first load connection and a second load connection. The semiconductor chip is electrically conductively connected by the second load connection to the lower contact piece, and electrically conductively connected to the upper contact piece by at least one bonding wire bonded to the first load connection. An explosion protection means is arranged between the first load connection and the upper contact piece and into which each of the bonding wires is embedded over at least 80% or over at least 90% of its length.
Public/Granted literature
- US20140035117A1 Explosion-Protected Semiconductor Module Public/Granted day:2014-02-06
Information query
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