Invention Grant
- Patent Title: Method and apparatus for indicating bad memory areas
- Patent Title (中): 用于指示不良记忆区域的方法和装置
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Application No.: US14176794Application Date: 2014-02-10
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Publication No.: US08982628B2Publication Date: 2015-03-17
- Inventor: Shuo-Nan Hung , Ti Wen Chen
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Kenta Suzue
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/26 ; G11C29/00

Abstract:
Regardless of data values stored on data memory cells, all read operations on the data memory cells are disallowed. For example, current flow is disallowed through a string of the data memory cells and one or more select line memory cells. The particular select value stored in a first select line memory cell in the string, for example coupled to a ground select line or a string select line, determines whether the string is enabled or disabled.
Public/Granted literature
- US20140160849A1 METHOD AND APPARATUS FOR INDICATING BAD MEMORY AREAS Public/Granted day:2014-06-12
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