Invention Grant
- Patent Title: Solid state pressure sensor
- Patent Title (中): 固态压力传感器
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Application No.: US13859032Application Date: 2013-04-09
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Publication No.: US08984953B2Publication Date: 2015-03-24
- Inventor: Manuela Larosa , Giovanni Sicurella
- Applicant: STMicroelectronics S.R.L
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMicroelectronics S.R.L.
- Current Assignee: STMicroelectronics S.R.L.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: ITMI2012A0617 20120416
- Main IPC: G01L9/00
- IPC: G01L9/00 ; H01L29/66 ; G01L9/04 ; G01L9/06

Abstract:
A solid state sensor to sense pressure includes a semiconductor substrate having a crystallographic design axis, and an odd number of identical inverter modules coupled in series to form a ring oscillator on the semiconductor substrate. Each inverter module includes a pair of structurally identical CMOS inverter stages. A logic input circuit starts oscillation of the ring oscillator and select a signal propagation path therein, either through CMOS inverter stage more affected by the induced mechanical stress or through CMOS inverter stages less affected by the pressure, using two logic command signals. The ring oscillator allows a reading of a frequency of oscillation based on the two logic command signals.
Public/Granted literature
- US20130269443A1 SOLID STATE PRESSURE SENSOR Public/Granted day:2013-10-17
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