Plasma etching method, plasma etching device, and method for producing photonic crystal

Invention Grant

US08986558B2 Plasma etching method, plasma etching device, and method for producing photonic crystal 有权

Title translation: 等离子体蚀刻方法，等离子体蚀刻装置以及制造光子晶体的方法

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Patent Title: Plasma etching method, plasma etching device, and method for producing photonic crystal
Patent Title (中): 等离子体蚀刻方法，等离子体蚀刻装置以及制造光子晶体的方法
Application No.: US13061252

Application Date: 2009-08-27
Publication No.: US08986558B2

Publication Date: 2015-03-24
Inventor: Susumu Noda , Shigeki Takahashi
Applicant: Susumu Noda , Shigeki Takahashi
Applicant Address: JP Kawaguchi
Assignee: Japan Science and Technology Agency
Current Assignee: Japan Science and Technology Agency
Current Assignee Address: JP Kawaguchi
Agency: Oliff PLC
Priority: JP2008-224035 20080901
International Application: PCT/JP2009/004178 WO 20090827
International Announcement: WO2010/023925 WO 20100304
Main IPC: H01L21/3065
IPC: H01L21/3065 ; G02B1/00 ; B82Y20/00

Plasma etching method, plasma etching device, and method for producing photonic crystal

Abstract:

A plasma etching method capable of oblique etching with a high aspect ratio and high uniformity is provided. In the plasma etching method, a base body is etched with a high aspect ratio by the following process: An electric-field control device having an ion-introducing orifice penetrating therethrough in a direction inclined from the normal to the surface of a base body is placed on or above the surface of this base body. Plasma is generated on the surface of the base body on or above which the electric-field control is placed. A potential difference is formed between the plasma and the base body so as to attract ions in the plasma toward the base body.

Abstract(Chinese):

提供了能够以高纵横比和高均匀性进行倾斜蚀刻的等离子体蚀刻方法。在等离子体蚀刻方法中，通过以下处理以高纵横比来蚀刻基体：具有从基体的法线垂直的方向贯通的离子引入孔的电场控制装置是放置在该基体的表面上或上方。在其上放置电场控制的基体的表面上产生等离子体。在等离子体和基体之间形成电位差，以将等离子体中的离子吸引到基体。

Public/Granted literature

US20110151673A1 PLASMA ETCHING METHOD, PLASMA ETCHING DEVICE, AND METHOD FOR PRODUCING PHOTONIC CRYSTAL Public/Granted day:2011-06-23

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀