Invention Grant
- Patent Title: FinFET integrated circuits and methods for their fabrication
- Patent Title (中): FinFET集成电路及其制造方法
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Application No.: US13937939Application Date: 2013-07-09
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Publication No.: US08987094B2Publication Date: 2015-03-24
- Inventor: Murat Kerem Akarvardar , Xiuyu Cai , Ajey Poovannummoottil Jacob
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234 ; H01L27/088 ; H01L29/66 ; H01L29/78
Abstract:
A fin field effect transistor integrated circuit (FinFET IC) has a plurality of fins extending from a semiconductor substrate, where a trough is defined between adjacent fins. A second dielectric is positioned within the trough, and a protruding portion of the fins extends above the second dielectric. A first dielectric is positioned between the fin sidewalls and the second dielectric.
Public/Granted literature
- US20150014776A1 FINFET INTEGRATED CIRCUITS AND METHODS FOR THEIR FABRICATION Public/Granted day:2015-01-15
Information query
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