Invention Grant
US08987143B2 Hydrogen plasma cleaning of germanium oxide surfaces 有权
氧化锗表面的氢等离子体清洗

Hydrogen plasma cleaning of germanium oxide surfaces
Abstract:
Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.
Public/Granted literature
Information query
Patent Agency Ranking
0/0