发明授权
- 专利标题: Semiconductor devices including a vertical channel transistor and methods of fabricating the same
- 专利标题(中): 包括垂直沟道晶体管的半导体器件及其制造方法
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申请号: US13588513申请日: 2012-08-17
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公开(公告)号: US08987811B2公开(公告)日: 2015-03-24
- 发明人: Hak-soo Yu , Chulwoo Park , Hyun-Woo Chung , Sua Kim , Hyunho Choi , Hongsun Hwang
- 申请人: Hak-soo Yu , Chulwoo Park , Hyun-Woo Chung , Sua Kim , Hyunho Choi , Hongsun Hwang
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Harness, Dickey & Pierce, PLC
- 优先权: KR10-2011-0082910 20110819
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L27/108
摘要:
According to example embodiments, a semiconductor device includes a plurality of active pillars protruding from a substrate. Each active pillar includes a channel region between upper and lower doped regions. A contact gate electrode faces the channel region and is connected to a word line. The word line extends in a first direction. A bit line is connected to the lower doped region and extends in a second direction. The semiconductor device further includes a string body connection portion that connects the channel region of at least two adjacent active pillars of the plurality of active pillars.