发明授权
- 专利标题: Semiconductor memory device and driving method of the same
- 专利标题(中): 半导体存储器件及其驱动方法
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申请号: US13606793申请日: 2012-09-07
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公开(公告)号: US08988933B2公开(公告)日: 2015-03-24
- 发明人: Ryousuke Takizawa
- 申请人: Ryousuke Takizawa
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Patterson & Sheridan, LLP
- 优先权: JPP2012-065370 20120322
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C11/16 ; G11C11/15 ; G11C5/14
摘要:
A non-volatile semiconductor memory device that can reduce power consumption includes plural memory banks containing nonvolatile plural memory cells. A common data bus is shared by plural memory banks and transmits the data of the memory cells. The plural switches are provided respectively between the electric source and plural memory banks. A controller controls the plural switches. The controller, in the data reading-out action or the data writing-in action, makes at least one of the switches corresponding to at least one of the memory banks accessible in a conduction state, and other switches in a non-conduction state.
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