Invention Grant
US08994148B2 Device bond pads over process control monitor structures in a semiconductor die
有权
器件接合焊盘超过过程控制监视半导体管芯中的结构
- Patent Title: Device bond pads over process control monitor structures in a semiconductor die
- Patent Title (中): 器件接合焊盘超过过程控制监视半导体管芯中的结构
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Application No.: US13770639Application Date: 2013-02-19
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Publication No.: US08994148B2Publication Date: 2015-03-31
- Inventor: Achim Gratz , Scott David Wallace , Tobias Jacobs
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L23/00

Abstract:
A semiconductor die includes a semiconductor substrate having an edge region surrounding an active region, the active region containing devices of an integrated circuit. The semiconductor die further includes interconnect wiring over the active region in an interlayer dielectric and electrically connected to the devices in the active region, and ancillary wiring over the edge region in the interlayer dielectric and isolated from the interconnect wiring and the devices in the active device region. The interlayer dielectric is passivated, and bond pads are provided over the interconnect wiring and electrically connected to the interconnect wiring through openings in the passivation over the active region. Additional bond pads are provided over the ancillary wiring and are electrically connected to the interconnect wiring through additional openings in the passivation over the active region.
Public/Granted literature
- US20140232001A1 Device Bond Pads Over Process Control Monitor Structures in a Semiconductor Die Public/Granted day:2014-08-21
Information query
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