Invention Grant
- Patent Title: Power semiconductor device
- Patent Title (中): 功率半导体器件
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Application No.: US12504225Application Date: 2009-07-16
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Publication No.: US08994165B2Publication Date: 2015-03-31
- Inventor: Takeshi Oi , Seiji Oka , Yoshiko Obiraki , Osamu Usui , Yasushi Nakayama
- Applicant: Takeshi Oi , Seiji Oka , Yoshiko Obiraki , Osamu Usui , Yasushi Nakayama
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-186603 20080718
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H05K3/32 ; H01L23/31 ; H01L25/07 ; H01L23/00 ; H01L25/16 ; H05K3/28

Abstract:
A power semiconductor device includes power semiconductor elements joined to wiring patterns of a circuit substrate, cylindrical external terminal communication sections, and wiring means for forming electrical connection between, for example, the power semiconductor elements and the cylindrical external terminal communication sections. The power semiconductor elements, the cylindrical external terminal communication sections, and the wiring means are sealed with transfer molding resin. The cylindrical external terminal communication sections are arranged on the wiring patterns so as to be substantially perpendicular to the wiring patterns, such that external terminals are insertable and connectable to the cylindrical external terminal communication sections, and such that a plurality of cylindrical external terminal communication sections among the cylindrical external terminal communication sections are arranged two-dimensionally on each of wiring patterns that act as main circuits.
Public/Granted literature
- US20100013085A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2010-01-21
Information query
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