Invention Grant
US08994362B2 RF power detection circuit with insensitivity to process, temperature and load impedance variation 有权
RF功率检测电路对过程不敏感,温度和负载阻抗变化

RF power detection circuit with insensitivity to process, temperature and load impedance variation
Abstract:
A circuit includes a multiplier circuit including a mixer configured to multiply a first differential input signal and a second differential input signal. The mixer includes a plurality of transistors including control terminals. The control terminals of the plurality of transistors receive a bias signal and the first differential input signal. A bias circuit is configured to generate the bias signal. The bias signal generated by the bias circuit is based on a voltage threshold of one of the plurality of transistors and a product of constant reference current and a bias resistance.
Information query
Patent Agency Ranking
0/0