Invention Grant
US08994362B2 RF power detection circuit with insensitivity to process, temperature and load impedance variation
有权
RF功率检测电路对过程不敏感,温度和负载阻抗变化
- Patent Title: RF power detection circuit with insensitivity to process, temperature and load impedance variation
- Patent Title (中): RF功率检测电路对过程不敏感,温度和负载阻抗变化
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Application No.: US13713328Application Date: 2012-12-13
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Publication No.: US08994362B2Publication Date: 2015-03-31
- Inventor: Renaldi Winoto , David M. Signoff
- Applicant: Marvell World Trade Ltd.
- Applicant Address: BB St. Michael
- Assignee: Marvell World Trade Ltd.
- Current Assignee: Marvell World Trade Ltd.
- Current Assignee Address: BB St. Michael
- Main IPC: G01R19/00
- IPC: G01R19/00 ; G01R17/00 ; G06G7/163 ; H03D7/14 ; G01R17/16 ; G06G7/16

Abstract:
A circuit includes a multiplier circuit including a mixer configured to multiply a first differential input signal and a second differential input signal. The mixer includes a plurality of transistors including control terminals. The control terminals of the plurality of transistors receive a bias signal and the first differential input signal. A bias circuit is configured to generate the bias signal. The bias signal generated by the bias circuit is based on a voltage threshold of one of the plurality of transistors and a product of constant reference current and a bias resistance.
Public/Granted literature
- US20130154615A1 RF POWER DETECTION CIRCUIT WITH INSENSITIVITY TO PROCESS, TEMPERATURE AND LOAD IMPEDANCE VARIATION Public/Granted day:2013-06-20
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