Invention Grant
- Patent Title: Method for driving power semiconductor switches
- Patent Title (中): 驱动功率半导体开关的方法
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Application No.: US13871288Application Date: 2013-04-26
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Publication No.: US08994413B2Publication Date: 2015-03-31
- Inventor: Peter Kanschat , Andre Arens , Hartmut Jasberg , Ulrich Schwarzer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102012207147 20120427
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/00 ; H03K17/16

Abstract:
A method for driving a controllable power semiconductor switch, having a first input terminal and first and second output terminals coupled to a voltage supply and a load, the first and second output terminals providing an output of the power semiconductor switch, includes adjusting a gradient of switch-off edges of an output current and an output voltage of the power semiconductor switch by a voltage source arrangement coupled to the input terminal. A gradient of switch-on edges of an output current and an output voltage is adjusted by a controllable current source arrangement that is coupled to the input terminal and generates a gate drive current. The profile of the gate drive current from one switching operation to a subsequent switching operation, beginning at a rise in the output current and ending at a decrease in the output voltage, is varied at most within a predefined tolerance band.
Public/Granted literature
- US20130285712A1 Method for Driving Power Semiconductor Switches Public/Granted day:2013-10-31
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