发明授权
US08994911B2 Optical memory device based on DHFLC material and method of preparing the same
有权
基于DHFLC材料的光学存储器件及其制备方法
- 专利标题: Optical memory device based on DHFLC material and method of preparing the same
- 专利标题(中): 基于DHFLC材料的光学存储器件及其制备方法
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申请号: US13260509申请日: 2010-03-26
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公开(公告)号: US08994911B2公开(公告)日: 2015-03-31
- 发明人: Prakash Jai , Ajay Kumar , Amit Choudhary , Anu Malik , Indrani Coondoo , Ashok Manikrao Biradar
- 申请人: Prakash Jai , Ajay Kumar , Amit Choudhary , Anu Malik , Indrani Coondoo , Ashok Manikrao Biradar
- 申请人地址: IN New Delhi
- 专利权人: Council of Scientific & Industrial Research
- 当前专利权人: Council of Scientific & Industrial Research
- 当前专利权人地址: IN New Delhi
- 代理机构: Tarolli, Sundheim, Covell & Tummino LLP
- 优先权: IN625/DEL/2009 20090327
- 国际申请: PCT/IB2010/000683 WO 20100326
- 国际公布: WO2010/109316 WO 20100930
- 主分类号: C09K19/02
- IPC分类号: C09K19/02 ; G11C11/22
摘要:
The invention relates to an optical memory device and method for the preparation of the optical memory device based on glycerol, a very common and versatile solvent, mixed deformed helix ferroelectric liquid crystal (DHFLC) having applications in ferroelectric liquid crystal based devices, the said method comprising the steps of forming patterns of different shapes and configurations by lithographic methods to obtain an effective electrode area of at least 4.5 mm on a glass substrate coated with indium tin oxide; depositing the patterned glass substrate with a polymer nylon 6/6 in the thickness range of 200 Å-400 Å; baking the coated substrate followed by hard rubbing of the polymer coated surface using buffing machine; photo lithographically developing spacer to maintain a uniform thickness of 3¼ m; filling glycerol mixed deformed ferroelectric liquid crystal material in the space between the coated glass substrates, followed by sealing the sandwiched glass substrates at the periphery; heating and cooling the sandwiched glass substrates, followed by application of electric field across the sandwiched substrates for achieving the stable memory action and fastness of the response, by applying an AC and DC field across the device to obtain an optical memory device.
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