发明授权
US08995804B2 Monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a photodetector 有权
包括掩埋异质结构半导体光放大器和光电检测器的单片集成结构

Monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a photodetector
摘要:
A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a deep ridge optical receiver comprising such structure are disclosed.
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