A method for fabricating a packaging structure having an embedded semiconductor element includes: providing a substrate having opposite first and second surfaces and at least an opening penetrating the first and second surfaces; forming a first metallic frame around the periphery of the opening on the first surface; forming at least an opening inside the first metallic frame by laser ablation; disposing a semiconductor chip in the opening; forming a first dielectric layer on the first and second surfaces and the chip; forming a first wiring layer on the first dielectric layer of the first surface; and forming a first built-up structure on the first dielectric layer and the first wiring layer of the first surface. A shape of the opening is precisely controlled through the first metallic frame around the periphery of the predefined opening region, thereby allowing the chip to be precisely embedded in the substrate.